DocumentCode
892156
Title
Characteristics of a Buried-Channel Graded Drain with Punchthrough Stopper (BGP) MOS Device
Author
Sunami, Hideo ; Shimohigashi, Katsuhiro ; Hashimoto, Norikazu
Volume
17
Issue
2
fYear
1982
fDate
4/1/1982 12:00:00 AM
Firstpage
237
Lastpage
240
Abstract
MOS device stuctures having a graded-drain (G), a buried-channel (B), and a punchthrough stopper (P) are realized by a tri-implantation technique without additional masking. Combined effects of B, G, and P are experimentally investigated. Significant improve ments in source-to-drain (S-D) breakdown voltage and the short-channel effect are observed in a BGP device. The BGP device structure will be durable for 5-V operation in the coming VLSI era.
Keywords
Field effect integrated circuits; Insulated gate field effect transistors; Ion implantation; Large scale integration; Acceleration; Boron; Breakdown voltage; Circuits; MOS devices; Secondary generated hot electron injection; Stress; Temperature; Threshold voltage; Very large scale integration;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1982.1051723
Filename
1051723
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