Title :
Two-Dimensional Dynamic Analysis of Short-Channel Thin-Film MOS Transistors Using a Minicomputer
Author :
Ipri, Alfred C. ; Medwin, Lawrence B. ; Goldsmith, Norman ; Brehm, Frederic W.
fDate :
4/1/1982 12:00:00 AM
Abstract :
A computer program is described for simulating two dimensional thin-film MOS transistors on a minicomputer. Data are presented showing the variation of internal carrier density with time until a steady-state condition is reached. These data show the formation of a drain-induced back channel whose conduction properties depend on the back-channel length and carrier mobility. For channel lengths below 2.0 μm, the two-dimensional steady-state drain current is shown to fit the expression...
Keywords :
Carrier density; Carrier mobility; Digital simulation; Insulated gate field effect transistors; Semiconductor device models; Thin film transistors; Charge carrier density; Computational modeling; Electrons; Lattices; MESFETs; MOSFETs; Microcomputers; Poisson equations; Thin film transistors; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1982.1051725
