DocumentCode :
892220
Title :
Noise in Microwave Transistors
Author :
Baechtold ; Strutt, M.J.O.
Volume :
16
Issue :
9
fYear :
1968
fDate :
9/1/1968 12:00:00 AM
Firstpage :
578
Lastpage :
585
Abstract :
Details of noise measurement techniques in the L- and S-bands are discussed. The complete noise parameters of microwave transistors are presented in the frequency range 0.6 to 4.2 GHz. Noise figure, available power gain, and noise measure are shown as a function of the source admittance and of the source reflection coefficient. The equivalent circuit and the noise figure of a microwave transistor are evaluated using an analog model.
Keywords :
Acoustic reflection; Admittance measurement; Circuit noise; Equivalent circuits; Frequency; Gain measurement; Microwave transistors; Noise figure; Noise measurement; Power measurement;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1968.1126756
Filename :
1126756
Link To Document :
بازگشت