DocumentCode
892220
Title
Noise in Microwave Transistors
Author
Baechtold ; Strutt, M.J.O.
Volume
16
Issue
9
fYear
1968
fDate
9/1/1968 12:00:00 AM
Firstpage
578
Lastpage
585
Abstract
Details of noise measurement techniques in the L- and S-bands are discussed. The complete noise parameters of microwave transistors are presented in the frequency range 0.6 to 4.2 GHz. Noise figure, available power gain, and noise measure are shown as a function of the source admittance and of the source reflection coefficient. The equivalent circuit and the noise figure of a microwave transistor are evaluated using an analog model.
Keywords
Acoustic reflection; Admittance measurement; Circuit noise; Equivalent circuits; Frequency; Gain measurement; Microwave transistors; Noise figure; Noise measurement; Power measurement;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1968.1126756
Filename
1126756
Link To Document