A Soft Error Rate Model for MOS Dynamic RAM´s

Author

Toyabe, Toru ; Shinoda, Takashi ; Aoki, Masaaki ; Kawamoto, Hiroshi ; Mitsusada, Kazumichi ; Masuhara, Toshiaki ; Asai, Shojiro

Volume

17

Issue

2

fYear

1982

fDate

4/1/1982 12:00:00 AM

Firstpage

362

Lastpage

367

Abstract

A soft error rate analysis model for MOS dynamic RAM´s is presented. The soft error rate can be quantitatively calculated by using a solution of the equations for diffusion and collection of alpha-particle-induced excess electrons and by combining a statistical treatment of alpha particle energy, incidence angles, and incidence positions with the noise charge calculation. The model is then applied to analyze a soft error experiment on 64-kbit dynamic RAM´s. It is shown that soft error characteristics with regard to signal charge (critical charge), as well as alpha energy and incidence angle dependencies, can be definitely determined. The model can also be used to predict the location of soft errors in MOS dynamic RAM´s.

Keywords

Alpha-particle effects; Field effect integrated circuits; Integrated memory circuits; Large scale integration; Random-access storage; Semiconductor device models; Alpha particles; Circuit simulation; DRAM chips; Electrons; Equations; Error analysis; Large scale integration; Predictive models; Random access memory; Very large scale integration;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.1982.1051742

Filename

1051742