DocumentCode
892498
Title
CAD model for threshold and subthreshold conduction in MOSFETs
Author
Antognetti, P. ; Caviglia, D.D. ; Profumo, E.
Volume
17
Issue
3
fYear
1982
fDate
6/1/1982 12:00:00 AM
Firstpage
454
Lastpage
458
Abstract
The authors propose a simple model for the operation of MOSFETs in both weak and strong inversion. The proposed model shows better agreement to experimental results than previous models in the subthreshold and threshold regions, and is well suited for use in circuit simulation programs; the authors have implemented it in MSINC and SPICE programs, and simulation results are compared to experimental data for a micropower amplifier.
Keywords
Circuit CAD; Insulated gate field effect transistors; Semiconductor device models; circuit CAD; insulated gate field effect transistors; semiconductor device models; Analytical models; Circuit simulation; Electronic components; MOS devices; MOSFET circuits; Numerical analysis; Operational amplifiers; SPICE; Subthreshold current; Threshold voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1982.1051759
Filename
1051759
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