Title :
Highly sensitive InGaAs/InAlAs quantum wire photo-FET
Author :
Ogura, M. ; Sugaya, T.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Japan
fDate :
3/30/2006 12:00:00 AM
Abstract :
An InGaAs/InAlAs quantum wire photo-FET has been fabricated on a V-grooved (311) InP substrate by atomic hydrogen assisted molecular beam epitaxy. The room-temperature photosensitivity of the quantum wire photo-FET reached 350 kA/W near a wavelength of 700 nm at a drain-source voltage of 1 V.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; molecular beam epitaxial growth; phototransistors; semiconductor quantum wires; 1 V; 700 nm; InGaAs-InAlAs-InP; V-grooved InP substrate; atomic hydrogen assisted molecular beam epitaxy; highly sensitive quantum wire photo-FET; room-temperature photosensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20060319
