Tunable GHz Repetitive ps Pulse InGaN Laser

Author

Chuah, Chong Wei ; Xu, Baoxi ; Tan, Tian Siong ; Xiang, Ning ; Chong, Tow Chong

Author_Institution

Opt. Mater. Syst., Data Storage Inst., Singapore

Volume

19

Issue

2

fYear

2007

Firstpage

70

Lastpage

72

Abstract

Using sinusoidal waveform, an InGaN laser unit which incorporated a 50-Omega impedance-matching unit was used to generate <70-ps pulses with a repetition frequency ranging from 800MHz to 3.0 GHz. At 1.0 GHz, the pulses with a pulsewidth of 31ps and a peak power of >450 mW were obtained using +27dBm of RF power. Tuning characteristics of this gain-switching laser were studied

Keywords

III-V semiconductors; gallium compounds; impedance matching; indium compounds; integrated optoelectronics; laser tuning; optical pulse generation; optical switches; semiconductor lasers; 1.0 GHz; 50 ohm; 800 to 3000 MHz; InGaN; InGaN laser; gain-switching laser; gigahertz laser; impedance-matching unit; picosecond pulse generation; picosecond pulse laser; repetitive pulse laser; sinusoidal waveform; tunable laser; Impedance; Laser mode locking; Laser tuning; Optical pulse generation; Optical pulses; Radio frequency; Semiconductor lasers; Solid lasers; Space vector pulse width modulation; Tunable circuits and devices; Gain-switching; InGaN semiconductor laser; picosecond (ps) laser source; semiconductor pulse laser and tunable repetition frequency;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.888997

Filename

4039390