DocumentCode
893735
Title
Large negative resistance in silicon p-i-n diodes at 300°K
Author
Nordman, J.E.
Volume
55
Issue
11
fYear
1967
Firstpage
2043
Lastpage
2043
Abstract
Silicon p-π-n diodes have been fabricated which exhibit large negative resistance at room temperature. The ratio of threshold voltage to minimum voltage is as large as 400. The volt-ampere characteristic above breakdown shows near-exponential behavior.
Keywords
Boron; Breakdown voltage; Charge carrier lifetime; Conductivity; Electric breakdown; Out of order; P-i-n diodes; Silicon; Temperature distribution; Threshold voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1967.6059
Filename
1447989
Link To Document