DocumentCode :
893930
Title :
Impact of Scaling on MOS Analog Performance
Author :
Wong, Stephen ; Salama, C. Andre T
Volume :
18
Issue :
1
fYear :
1983
fDate :
2/1/1983 12:00:00 AM
Firstpage :
106
Lastpage :
114
Abstract :
A first-order analysis of the impact of scaling on MOS analog performance under moderate scaling conditions is presented in this paper. Assuming a polysilicon gate ion-implanted MOS technology, quasi-constant voltage (QCV) scaling is shown to be the optimal scaling law, offering the best overall analog performance and resulting in an increase in functional density, gain-bandwidth product with a moderate degradation in gain, and signal-to-noise ratio. The first-order analysis agrees fairly well with computer simulation. A typical case study shows that under moderate scaling conditions, CMOS can generally offer a higher voltage gain when compared to depletion load NMOS and is the preferred technology for scaled analog implementations.
Keywords :
MOS analog integrated circuits; Semiconductor devices; Very-large-scale integration; Analog circuits; CMOS technology; Degradation; Digital circuits; Doping; Integrated circuit technology; Performance analysis; Performance gain; Very large scale integration; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1983.1051906
Filename :
1051906
Link To Document :
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