Characterization of fundamental parameters of a semiconductor laser with an injected optical probe

Author

Liu, J.M. ; Simpson, T.B.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

5

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

380

Lastpage

382

Abstract

A simple technique using a direct optical probe is demonstrated for parasitic-free characterization of many intrinsic laser parameters, including the relaxation resonance frequency, the relaxation rate, the differential and nonlinear gain parameters, the linewidth enhancement factor, and the carrier and photon lifetimes. It consists of a single experimental setup and is broadly applicable to semiconductor lasers of different wavelengths and different dynamic bandwidths.<>

Keywords

laser theory; nonlinear optics; semiconductor lasers; spectral line breadth; carrier lifetimes; differential gain parameters; direct optical probe; dynamic bandwidths; fundamental parameters; injected optical probe; intrinsic laser parameters; linewidth enhancement factor; nonlinear gain parameters; parasitic-free characterization; photon lifetimes; relaxation rate; relaxation resonance frequency; semiconductor laser; Bandwidth; Chirp modulation; Gain; Laser stability; Nonlinear optics; Optical modulation; Probes; Resonance; Resonant frequency; Semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.212671

Filename

212671