Analysis on FM efficiency of InGaAs/InGaAsP SCH-MQW LD´s taking injection carrier transport into account

Author

Yamazaki, H. ; Yamaguchi, M. ; Kitamura, M. ; Mito, I.

Author_Institution

NEC Corp., Tsukuba, Japan

Volume

5

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

396

Lastpage

398

Abstract

FM efficiencies of InGaAs/InGaAsP separate-confinement-heterostructure multiple-quantum-well laser diodes (SCH-MQW LDs) were theoretically analyzed taking carrier transport in the SCH layer into account. It was found that injection carrier transport from the SCH layers to the wells plays an important role in the FM response, due to a finite carrier capture time. The calculated values for FM efficiency were in excellent agreement with measured values for LDs with different SCH layer thicknesses, which indicates that a thick SCH layer is desirable for high FM efficiency operation.<>

Keywords

III-V semiconductors; frequency modulation; gallium arsenide; gallium compounds; indium compounds; laser theory; optical modulation; semiconductor lasers; FM efficiency; FM response; InGaAs-InGaAsP; SCH-MQW LD´s; finite carrier capture time; injection carrier transport; laser diodes; layer thicknesses; multiple-quantum-well; semiconductors; separate-confinement-heterostructure; Carrier confinement; Diode lasers; Distributed feedback devices; Frequency modulation; Frequency shift keying; Indium gallium arsenide; Optical distortion; Photonics; Quantum well devices; Thickness measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.212676

Filename

212676