Title :
Enhanced electroabsorption in disordered AlGaAs/GaAs quantum wells
Author :
Li, E. Herbert ; Weiss, Bernard L.
Author_Institution :
Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK
fDate :
4/1/1993 12:00:00 AM
Abstract :
The electric field induced change of absorption coefficient at room temperature is calculated for disordered Al/sub 0.3/Ga/sub 0.7/As/GaAs single-quantum-well (QW) structures at wavelengths around the QW bandedge. Results show that the change of absorption coefficient increases with applied field for both TE and TM polarized light for all cases of disordering considered, and the maximum change of absorption coefficient increases with the extent of disordering. These changes show that the interaction length of an electroabsorption modulator can be reduced by up to 30% if disordered QWs are used.<>
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; optical modulation; semiconductor quantum wells; Al/sub 0.3/Ga/sub 0.7/As-GaAs; QW bandedge; TE polarized light; TM polarized light; absorption coefficient; disordered AlGaAs-GaAs SQW; electric field induced change; electroabsorption modulator; interaction length; room temperature; Absorption; Charge carrier processes; Excitons; Gallium arsenide; Integrated optics; Optical devices; Optical polarization; Stark effect; Tellurium; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
