Fabrication and characterization of an In/sub 0.53/Ga/sub 0.47/As/InP photon transport transistor

Author

Chu, A.K. ; Gigase, Y. ; Lee, H.Y. ; Hafich, M.J. ; Robinson, G. ; Van Zeghbroeck, B.

Author_Institution

Dept. of Electr. & Comput. Eng., Colorado Univ., Boulder, CO, USA

Volume

5

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

454

Lastpage

456

Abstract

A photon transport transistor fabricated using the lattice-matched In/sub 0.53/Ga/sub 0.47/As/InP material system is described. The device consists of a light emitting diode integrated on top of a photodiode, with very tight optical coupling between the two devices. The device behaves like a bipolar junction transistor except that photons rather than minority carriers are transported through the base region. The device fabricated has a voltage gain of 258 and a current gain of 0.07, yielding an electrical power gain of 18.1. The center wavelength emitted by the light emitting diode is at 1.55 mu m.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; light emitting diodes; p-i-n photodiodes; phototransistors; 1.55 micron; In/sub 0.53/Ga/sub 0.47/As-InP; MQW LED; N-i-p photodiode; OEIC; center wavelength; current gain; electrical power gain; fabrication; integration; lattice-matched In/sub 0.53/Ga/sub 0.47/As/InP material system; light emitting diode; photodiode; photon transport transistor; very tight optical coupling; voltage gain; Electronic circuits; Indium phosphide; Information processing; Light emitting diodes; Optical coupling; Optical device fabrication; Optical fiber communication; Photodiodes; Transistors; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.212697

Filename

212697