Title :
Room-Temperature Continuous-Wave Electrically Injected InP–GaInAsP Equilateral-Triangle-Resonator Lasers
Author :
Huang, Yong-Zhen ; Hu, Yong-Hong ; Chen, Qin ; Wang, Shi-Jiang ; Du, Yun ; Fan, Zhong-Chao
Author_Institution :
Chinese Acad. of Sci., Beijing
fDate :
7/1/2007 12:00:00 AM
Abstract :
Equilateral-triangle-resonator (ETR) microlasers with an output waveguide connected to one of the vertices of the ETR are suitable to be a light source for photonic integrated circuits. InP-GaInAsP ETR lasers with side length from 10 to 30 mum and the output-waveguide width of 1 or 2 mum are fabricated using standard photolithography and inductively coupled-plasma etching techniques. Continuous-wave electrically injected 1520-nm ETR laser with 20-m sides is realized with the maximum output power 0.17 and 0.067 mW and the threshold current 34 and 43 mA at 290 K and 295 K, respectively.
Keywords :
III-V semiconductors; arsenic compounds; gallium compounds; indium compounds; integrated optics; light sources; microcavity lasers; photolithography; semiconductor lasers; sputter etching; waveguide lasers; InP-GaInAsP; current 34 mA; current 43 mA; equilateral triangle resonator microlasers; inductively coupled-plasma etching; light source; photolithography; photonic integrated circuits; power 0.067 mW; power 0.17 mW; room temperature continuous wave electrically injected lasers; size 1 mum; size 10 mum to 30 mum; size 2 mum; temperature 290 K; temperature 295 K; waveguide; wavelength 1520 nm; Coupling circuits; Etching; Light sources; Lithography; Optical coupling; Photonic integrated circuits; Power generation; Power lasers; Threshold current; Waveguide lasers; Laser resonators; optical resonators; semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.898822
