Title :
An effect of the subthreshold current on scaled-down MOS dynamic RAMs
Author :
Mashiko, Koichiro ; Yamada, Michihiro ; Nagayama, Yasuji ; Yoshihara, Tsutomu ; Nakano, Takao
Abstract :
Data-output holding characteristics of MOS dynamic RAMs with 2.5 /spl mu/m design rules are studied by employing the hidden-RAS-only-refresh mode. It is verified that the noise voltage caused by internal circuit operation increases the subthreshold current and that the clamp circuitry effectively decreases the subthreshold current.
Keywords :
Field effect integrated circuits; Integrated memory circuits; Random-access storage; field effect integrated circuits; integrated memory circuits; random-access storage; Circuit testing; Critical current; DRAM chips; Josephson effect; Josephson junctions; Subthreshold current; Superconductivity; Tunneling; Vehicle dynamics; Very large scale integration;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1983.1051969
