DocumentCode
894481
Title
Reliability-extrapolation methodology of semiconductor laser diodes: is a quick life test feasible?
Author
Huang, Jia-Sheng
Author_Institution
Div. of Emcore, Ortel, Alhambra, CA, USA
Volume
6
Issue
1
fYear
2006
fDate
3/1/2006 12:00:00 AM
Firstpage
46
Lastpage
51
Abstract
The test duration of semiconductor lasers required for Telcordia reliability qualification is usually lengthy. An alternative accelerated life test to validate the reliability design is critical for the timely deployment of new products. In this paper, the results of fitting time-to-failure extrapolations based on experimental data from 500-5000-h measurements are compared. It is shown that, for buried-heterostructure lasers that exhibit gradual performance degradation, the lifetime predictions based on 500-1000-h experimental data are consistent with those based on 5000-h data. For ridge-type lasers, little degradation occurs; hence, an early reliability prediction is less accurate. The determining factors that affect the accuracy of the early reliability predictions are discussed.
Keywords
extrapolation; laser reliability; life testing; semiconductor lasers; 500 to 5000 h; Telcordia reliability qualification; accelerated life test; buried-heterostructure lasers; lifetime prediction; quick life test; reliability-extrapolation methodology; ridge-type lasers; semiconductor laser diodes; time-to-failure extrapolations; Current density; Degradation; Diode lasers; Life testing; Qualifications; Semiconductor device reliability; Semiconductor device testing; Semiconductor lasers; Telecommunication network reliability; Temperature dependence; Ageing; heterostructures; metal–organic chemical vapor deposition; optical materials; semiconductor lasers;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2006.870346
Filename
1618654
Link To Document