DocumentCode :
894514
Title :
Ultrathin gate-oxide breakdown-reversibility at low voltage
Author :
Cheung, Kin P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
Volume :
6
Issue :
1
fYear :
2006
fDate :
3/1/2006 12:00:00 AM
Firstpage :
67
Lastpage :
74
Abstract :
Solid-insulator breakdown always leads to a permanent conduction path that is irreversible. This is a built-in assumption in all gate-oxide breakdown reliability measurement and lifetime projection. This assumption is not valid when the gate-oxide thickness is less than 2 nm and the operation voltage is 1 V or less. The authors examine the impact of reversible breakdown using breakdown data from 12 000 devices stressed by plasma charging damage. The data support the notion that when the surge current is limited at breakdown, the breakdown event may not leave any mark such as a permanent conduction path. The implication is that the commonly used accelerated-stress test, such as time dependent dielectric breakdown (TDDB), may be underestimating the actual gate-oxide lifetime by as much as a million folds.
Keywords :
MOSFET; low-power electronics; semiconductor device breakdown; semiconductor device reliability; accelerated-stress test; actual gate-oxide lifetime; gate-oxide breakdown reversibility; lifetime projection; plasma charging damage; reliability estimation; reliability measurement; semiconductor device breakdown; solid-insulator breakdown; time dependent dielectric breakdown; ultrathin breakdown reversibility; Dielectric breakdown; Electric breakdown; Insulation; Life estimation; Life testing; Low voltage; MOSFET circuits; Nanoelectronics; Plasma measurements; Stress; MOSFETs; nanotechnology; reliability estimation; semiconductor device breakdown;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2006.870350
Filename :
1618657
Link To Document :
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