DocumentCode
894727
Title
Characteristics of planar transistors under localized compressive stresses
Author
Ohwada, A.
Volume
56
Issue
1
fYear
1968
Firstpage
87
Lastpage
88
Abstract
Modes of variation of current gain in planar transistors stressed locally on the emitter are described by simple mathematics. Stress effects upon both the band gap and the carrier recombination time are taken into account.
Keywords
Automatic control; Compressive stress; Control systems; Controllability; Kalman filters; Linear systems; Mathematics; Silicon; Transmission line matrix methods; Vectors;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1968.6158
Filename
1448088
Link To Document