DocumentCode :
895162
Title :
A comparison of amplitude-phase coupling and linewidth enhancement in semiconductor quantum-well and bulk lasers
Author :
Zhao, B. ; Chen, T.R. ; Yariv, A.
Author_Institution :
Thomas J. Watson Sr. Lab. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA
Volume :
29
Issue :
4
fYear :
1993
fDate :
4/1/1993 12:00:00 AM
Firstpage :
1027
Lastpage :
1030
Abstract :
The amplitude-phase coupling factor α (linewidth enhancement factor) is compared for typical semiconductor quantum-well and bulk double heterostructure lasers. As a direct consequence of the reduction of the differential gain, there is no reduction of α in single-quantum-well lasers compared to bulk lasers. The number of quantum wells strongly affects the amplitude-phase coupling in quantum-well lasers. It is shown that the interband transition induced amplitude-phase coupling dominates that induced by the plasma effect of carriers in typical quantum-well lasers. By considering the spontaneous emission factor in the spectral linewidth, the authors show that there is an optimal number of quantum wells for achieving the narrowest spectral linewidth
Keywords :
semiconductor lasers; spectral line breadth; amplitude-phase coupling factor; bulk double heterostructure lasers; carriers; differential gain; interband transition induced amplitude-phase coupling; linewidth enhancement factor; plasma effect; single-quantum-well lasers; spectral linewidth; spontaneous emission factor; Chirp; Laser noise; Laser transitions; Optical coupling; Optical distortion; Power lasers; Quantum well lasers; Quantum wells; Semiconductor lasers; Spontaneous emission;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.214485
Filename :
214485
Link To Document :
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