Title :
Residual charge on a switched capacitor [MOS type]
fDate :
12/1/1983 12:00:00 AM
Abstract :
A simple semiempirical model is presented to estimate the residual charge (feedthrough error) on a switched MOS capacitor. The model ignores the complexities of changing channel resistance during the turnoff transient, treating the channel as a simple on/off switch. In spite of this simplification, the results agree with computer simulations over a wide range of parameters. The model is easily extended to more complex situations found in typical switched-capacitor circuits.
Keywords :
Capacitors; Metal-insulator-semiconductor devices; Semiconductor device models; Switching; capacitors; metal-insulator-semiconductor devices; semiconductor device models; switching; Capacitance; Circuit simulation; Computational modeling; Computer errors; Computer simulation; MOS capacitors; Solid modeling; Switches; Switching circuits; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1983.1052037
