Single-mode blue-violet laser diodes with low beam divergence and high COD level

Author

Ryu, H.Y. ; Ha, K.H. ; Lee, S.N. ; Choi, K.K. ; Jang, T. ; Son, J.K. ; Chae, J.H. ; Chae, S.H. ; Paek, H.S. ; Sung, Y.J. ; Sakong, T. ; Kim, H.G. ; Kim, K.-S. ; Kim, Y.H. ; Nam, O.H. ; Park, Y.J.

Author_Institution

Display Lab., Samsung Adv. Inst. of Technol., Suwon, South Korea

Volume

18

Issue

9

fYear

2006

fDate

5/1/2006 12:00:00 AM

Firstpage

1001

Lastpage

1003

Abstract

We demonstrate GaN-based high-power single transverse-mode laser diodes (LDs) emitting at 405 nm. LD structures are designed to exhibit a high level of catastrophic optical damage and small beam divergence angle. By the control of refractive index profiles, we achieved a vertical beam divergence angle of as low as 17.5° and maximum output power of as high as 470 mW under continuous-wave operation condition. In addition, nearly fundamental transverse-mode operation is demonstrated up to 500-mW pulsed output power by far-field investigation.

Keywords

III-V semiconductors; gallium compounds; laser beams; laser modes; refractive index; semiconductor lasers; 470 mW; 500 mW; GaN; GaN-based laser diodes; blue-violet laser diodes; catastrophic optical damage; continuous-wave operation; far-field investigation; high COD level; low beam divergence; pulsed output power; refractive index profiles; single-mode laser diodes; transverse-mode operation; vertical beam divergence angle; Diode lasers; Laser beams; Nonhomogeneous media; Optical devices; Optical materials; Optical refraction; Optical superlattices; Optical variables control; Power generation; Refractive index; (Al,In)GaN; Blu-ray disk (BD); catastrophic optical damage (COD); far field; laser diode (LD);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.873540

Filename

1618733