Title :
Zero gate leakage current in the enhancement mode MOSFET
Author :
Negro, Vincent C.
Author_Institution :
U.S. Atomic Energy Commission, New York, N.Y.
Abstract :
Gate leakage current measurements of the enhancement mode MOSFET taken with a vibrating reed electrometer in a carefully controlled environment indicate that zero gate leakage current can be achieved. The zero region is delineated by the change of sign in the gate leakage current when the drain-to-source voltage is increased.
Keywords :
Bandwidth; Current measurement; Demodulation; Filters; Frequency modulation; Insulation life; Leakage current; MOSFET circuits; Testing; Voltage-controlled oscillators;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1968.6226
