DC Characteristics of AlGaAs/GaAs/GaN HBTs Formed by Direct Wafer Fusion

Author

Chuanxin Lian ; Huili Xing ; Wang, C.S. ; McCarthy, L. ; Brown, D.

Author_Institution

Dept. of Electr. Eng., Notre Dame Univ., IN

Volume

28

Issue

1

fYear

2007

Firstpage

8

Lastpage

10

Abstract

We have fabricated AlGaAs/GaAs/GaN heterojunction bipolar transistors (HBTs) formed by direct wafer fusion with different fusion temperatures. By employing a low wafer fusion temperature of 550 degC, current gains as high as ~9 and output currents as high as ~65 mA (emitter size of 100times120 mum²) were obtained. The effective minority carrier lifetime in the base was estimated to have decreased ~20 times due to the fusion process. In comparison, HBTs produced with higher wafer fusion temperatures (600 degC and 650 degC) exhibit lower current gains (~2-3) and higher base-collector leakage currents

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; heterojunction bipolar transistors; wafer bonding; wide band gap semiconductors; 550 C; 600 to 650 C; AlGaAs-GaAs-GaN; HBT DC characteristics; direct wafer fusion; heterojunction bipolar transistors; minority carrier lifetime; Charge carrier lifetime; Etching; Gallium arsenide; Gallium nitride; HEMTs; Heterojunction bipolar transistors; Lattices; MODFETs; Ohmic contacts; Temperature; Gallium arsenide; gallium nitride; heterojunction bipolar transistor (HBT); wafer fusion;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.887932

Filename

4039557