Title :
CMOS RAM Cosmic-Ray-Induced-Error-Rate Analysis
Author :
Pickel, J.C. ; Blandford, J.T., Jr.
Author_Institution :
Rockwell International Science Center 3370 Miraloma Avenue Anaheim, California 92803
Abstract :
The methodology and results are presented for a detailed analysis to predict the galactic cosmic ray induced bit-error rate in three commercially availale CMOS RAM types. A summary of cyclotron simulation data is provided and utilization of the experimental results in the Cosmic Ray Induced Error Rate (CRIER) model is described.
Keywords :
Bit error rate; CMOS technology; Cyclotrons; Error analysis; Iron; Large scale integration; Read-write memory; Satellites; Space technology; Space vehicles;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1981.4335656
