A High Schottky-Barrier of 1.1 eV Between Al and S-Passivated p-Type Si(100) Surface

Author

Song, G. ; Ali, M.Y. ; Tao, M.

Author_Institution

Texas Univ., Arlington, TX

Volume

28

Issue

1

fYear

2007

Firstpage

71

Lastpage

73

Abstract

We report a high Schottky-barrier between Al and S-passivated p-type Si(100) surface. Capacitance-voltage measurements indicate a barrier height of 1.1 eV, while activation-energy measurements suggest 0.94-0.97 eV. Possible reasons for the discrepancy are proposed. The barrier height of 1.1 eV suggests degenerate inversion on the p-type Si surface, and Fermi statistics is used to describe its electrostatics. Although fabricated like a Schottky diode, this Al/S-passivated p-type Si(100) device works like a p-n junction diode. Temperature-dependent current-voltage measurements reveal that S passivation reduces the reverse saturation current of Al/p-type Si(100) diodes by over six orders of magnitude

Keywords

Schottky barriers; capacitance measurement; elemental semiconductors; passivation; silicon; voltage measurement; 0.94 to 0.97 eV; 1.1 eV; Fermi statistics; Si; activation-energy measurements; capacitance-voltage measurements; high Schottky-barrier; p-type Si(100); reverse saturation current; semiconductor-metal interfaces; surface treatment; temperature-dependent current-voltage measurements; Capacitance measurement; Doping; Electrostatic measurements; Frequency; Interface states; Passivation; Schottky diodes; Semiconductor diodes; Surface cleaning; Surface treatment; Schottky-barriers; semiconductor–metal interfaces; silicon; sulfur; surface treatment;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.887942

Filename

4039566