Title :
An Advanced, Radiation Hardened Bulk CMOS/LSI Technology
Author :
Schroeder, J.E. ; Lichtel, R.L. ; Gingerich, B.L.
Author_Institution :
Harris Semiconductor, Programs Division P. O. Box 883, Melbourne, Fla. 32901
Abstract :
An advanced, second generation, bulk, Si-gate CMOS process is described. This process is capable of producing LSI and VLSI parts that are latch-up free and hardened to total dose levels in excess of 2 × 105 rad-Si for applications in space and weapons radiation environments. Two memories designed to use this process are also described. Both circuits are 4096-bit, static CMOS RAMs.
Keywords :
CMOS process; CMOS technology; Circuits; Geometry; Implants; Large scale integration; Oxidation; Radiation hardening; Random access memory; Strips;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1981.4335669
