Title :
An extended Gummel-Poon model for an extreme range of temperature
fDate :
4/1/1984 12:00:00 AM
Abstract :
An extended Gummel-Poon model qualified for extreme temperature requirements (-40/spl deg/C/spl les/T/spl les/150/spl deg/C) is presented. Comparing measurements and SPICE calculations of a bipolar transistor, the improvement of the modified model is demonstrated. The physical parameters determining the current gain characteristics are discussed.
Keywords :
Bipolar transistors; bipolar transistors; Bipolar transistors; Circuits; Current measurement; Electrical resistance measurement; Gain measurement; Q measurement; SPICE; Temperature dependence; Temperature distribution; Temperature sensors;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1984.1052125
