Short-channel effects and drain-induced barrier lowering in nanometer-scale GaAs MESFET´s

Author

Adams, James A. ; Thayne, I.G. ; Wilkinson, C.D.W. ; Beaumont, S.P. ; Johnson, N.P. ; Kean, A.H. ; Stanley, C.R.

Author_Institution

Glasgow Univ., UK

Volume

40

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

1047

Lastpage

1052

Abstract

Short-channel effects in GaAs MESFETs are investigated. MESFETs were fabricated with gate lengths in the range of 40 to 300 nm with GaAs and AlGaAs buffer layers. The MESFETs were characterized by DC transconductance, output conductance, and subthreshold measurements. This work focuses on overcoming the short-channel effect of large output conductance by the inclusion of an AlGaAs buffer layer, and identifying the benefit the AlGaAs buffer affords for reducing subthreshold current, including the effect of drain-induced barrier lowering. The design yielded 300-nm gate-length MESFETs with excellent suppression of the major short-channel effects

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; nanotechnology; semiconductor device testing; 40 to 300 nm; AlGaAs buffer layers; DC transconductance; GaAs; GaAs MESFETs; drain-induced barrier lowering; gate lengths; nanometer-scale; output conductance; short-channel effect; subthreshold current; Analytical models; Application specific integrated circuits; Buffer layers; Gallium arsenide; Integrated circuit yield; MESFET integrated circuits; Nanoelectronics; Subthreshold current; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.214727

Filename

214727