Title :
Electron transport in 0.15-μm gate In0.52Al0.48 As/In0.53Ga0.47As HEMT
Author :
Zhao, Y. ; Tsui, Daniel C. ; Chao, P.C.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
fDate :
6/1/1993 12:00:00 AM
Abstract :
Magneto-transport and cyclotron resonance measurements were made to determine directly the density, mobility, and the effective mass of the charge carriers in a high-performance 0.15-μm gate In0.52 Al0.48As/In0.53Ga0.47As high-electron-mobility transistor (HEMT) at low temperatures. At the gate voltage VG=0 V, the carrier density n g under the gate is 9×1011 cm-2, while outside of the gate region ng=2.1×1012 cm-2. The mobility under the gate at 4.2 K is as low as 400 cm2/V-s when VG<0.1 V and rapidly approaches 11000 cm2/V-s when VG>0.1 V. The existence of this high mobility threshold is crucial to the operation of the device and sets its high-performance region in VG>0.1 V
Keywords :
III-V semiconductors; aluminium compounds; carrier density; carrier mobility; cryogenics; cyclotron resonance; effective mass (band structure); gallium arsenide; high electron mobility transistors; indium compounds; magnetoresistance; 0.15 micron; 4.2 K; HEMT; In0.52Al0.48As-In0.53Ga0.47 As; carrier density; carrier mobility; cyclotron resonance; effective mass; electron transport; high mobility threshold; high-electron-mobility transistor; high-performance region; low temperatures; magnetotransport; Charge carriers; Charge measurement; Current measurement; Cyclotrons; Density measurement; Effective mass; Electrons; HEMTs; MODFETs; Magnetic resonance;
Journal_Title :
Electron Devices, IEEE Transactions on
