Novel high-isolation FET switches

Author

Imai, Nobuaki ; Minakawa, Akira ; Okazaki, Hiroshi

Author_Institution

ATR Opt. & Radio Commun. Res. Labs., Kyoto, Japan

Volume

44

Issue

5

fYear

1996

fDate

5/1/1996 12:00:00 AM

Firstpage

685

Lastpage

691

Abstract

This paper describes novel high-isolation monolithic microwave/millimeter-wave integrated circuit (MMIC) field-effect transistor (FET) switches that have higher isolation characteristics than conventional switches without much insertion loss degradation. The newly developed switches consist of series/shunt FETs and T-shaped R-C-R circuit. Each FET switch utilizes the parasitic capacitive component of the FETs in the off-state to produce a band-rejection filter at the operating frequency. The design method of the newly proposed switches and their characteristics are described herein. With this method, the isolation characteristics are improved by more than 15 dB between 5.4 GHz and 6.4 GHz and more than 20 dB between 5.5 GHz and 6.1 GHz over conventional values

Keywords

field effect MMIC; field effect transistor switches; microwave isolators; 5.4 to 6.4 GHz; T-shaped R-C-R circuit; band-rejection filter; high-isolation MMIC FET switches; insertion loss; parasitic capacitance; series/shunt FETs; Degradation; Design methodology; Field effect MMICs; Filters; Frequency; Insertion loss; Microwave FETs; Millimeter wave integrated circuits; Switches; Switching circuits;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.493921

Filename

493921