A transconductance spectroscopy approach to device level surface state characterization

Author

Zhao, Jian H. ; Hwang, Robert ; Chang, Steve

Author_Institution

Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA

Volume

40

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

1172

Lastpage

1174

Abstract

A device level transconductance spectroscopy approach is developed for characterizing surface states in metal-semiconductor field-effect transistors. A comparison of the theoretical results and the available experimental observations shows that the model can successfully explain both the surface leakage current dependence of transconductance dispersion magnitude reported by M. Ozeki et al. (1982) and the temperature dependence of transconductance dispersion observed by S.R. Blight et al. (1986)

Keywords

Schottky gate field effect transistors; deep level transient spectroscopy; leakage currents; semiconductor device models; surface electron states; DLTS; MESFET; device level surface state characterization; metal-semiconductor field-effect transistors; surface leakage current; temperature dependence; transconductance dispersion; transconductance spectroscopy; Electron traps; Energy states; FETs; Gallium arsenide; Leakage current; MESFETs; Spectroscopy; Surface resistance; Temperature distribution; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.214747

Filename

214747