• DocumentCode
    896393
  • Title

    Visual revelations from silicon ab initio calculations

  • Author

    Wolfe, Robert H. ; Needels, Mark ; Arias, Tomas ; Joannopoulos, John D.

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • Volume
    12
  • Issue
    4
  • fYear
    1992
  • fDate
    7/1/1992 12:00:00 AM
  • Firstpage
    45
  • Lastpage
    53
  • Abstract
    The use of volumetric rendering for interpreting the computed electronic structure of solids is discussed. The structure, manifested as an atomic-scale 3-D electronic charge density, is computed from a pure mathematical model. The mathematical technique represents a class of ab initio computations that predict the atomic structure by solving the equations of quantum mechanics, wherein all configuration parameters except the atomic number are under the analyst´s control. Some physics aspects of electronic structure of solids are reviewed. The use of this visualization technique to interpret the computations for silicon with an oxygen impurity and for room-temperature silicon is described.<>
  • Keywords
    ab initio calculations; band structure of crystalline semiconductors and insulators; computer graphics; crystal atomic structure of elements; physics computing; silicon; 3D electronic charge density; O; Si; atomic structure; configuration parameters; electronic structure; quantum mechanics; room-temperature; silicon ab initio calculations; solids; visualization technique; volumetric rendering; Bonding; Clouds; Data visualization; Impurities; Mathematical model; Optical imaging; Physics; Silicon; Solids; Surface morphology;
  • fLanguage
    English
  • Journal_Title
    Computer Graphics and Applications, IEEE
  • Publisher
    ieee
  • ISSN
    0272-1716
  • Type

    jour

  • DOI
    10.1109/38.144826
  • Filename
    144826