DocumentCode
896393
Title
Visual revelations from silicon ab initio calculations
Author
Wolfe, Robert H. ; Needels, Mark ; Arias, Tomas ; Joannopoulos, John D.
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume
12
Issue
4
fYear
1992
fDate
7/1/1992 12:00:00 AM
Firstpage
45
Lastpage
53
Abstract
The use of volumetric rendering for interpreting the computed electronic structure of solids is discussed. The structure, manifested as an atomic-scale 3-D electronic charge density, is computed from a pure mathematical model. The mathematical technique represents a class of ab initio computations that predict the atomic structure by solving the equations of quantum mechanics, wherein all configuration parameters except the atomic number are under the analyst´s control. Some physics aspects of electronic structure of solids are reviewed. The use of this visualization technique to interpret the computations for silicon with an oxygen impurity and for room-temperature silicon is described.<>
Keywords
ab initio calculations; band structure of crystalline semiconductors and insulators; computer graphics; crystal atomic structure of elements; physics computing; silicon; 3D electronic charge density; O; Si; atomic structure; configuration parameters; electronic structure; quantum mechanics; room-temperature; silicon ab initio calculations; solids; visualization technique; volumetric rendering; Bonding; Clouds; Data visualization; Impurities; Mathematical model; Optical imaging; Physics; Silicon; Solids; Surface morphology;
fLanguage
English
Journal_Title
Computer Graphics and Applications, IEEE
Publisher
ieee
ISSN
0272-1716
Type
jour
DOI
10.1109/38.144826
Filename
144826
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