DocumentCode
896825
Title
Analytical representations of solid-state devices
Author
Linder, J.S.
Volume
56
Issue
4
fYear
1968
fDate
4/1/1968 12:00:00 AM
Firstpage
745
Lastpage
747
Abstract
Simple expressions for the dependence of hole and electron mobilities upon free carrier densities are utilized to derive equivalent representations of the diode equation as well as other solid-state device equations. The resulting mathematical models vividly display the effects of impurity concentrations in the semiconductor regions on important device parameters.
Keywords
Charge carrier density; Displays; Electron mobility; Equations; Error analysis; P-n junctions; Semiconductor device doping; Semiconductor diodes; Semiconductor process modeling; Solid state circuits;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1968.6369
Filename
1448299
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