Field effect transistor circulators

Author

Ayasli, Yalcin

Author_Institution

Hittite Microwave Corp., Woburn, MA, USA

Volume

25

Issue

5

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

3242

Lastpage

3247

Abstract

Field-effect-transistor circulators that are compatible with monolithic microwave integrated circuit technology are described. These passive nonreciprocal components are formed with inductors, capacitors, transmission line sections, and microwave transistors, and all can be integrated on a single IC chip the size of a pinhead. The operating principle, power-handling capability, and noise performance of these components are discussed for both narrowband and wideband applications, and examples of their practical implementation are given. The transistor-based 2-, 3-, and 4-port passive nonreciprocal components described offer an alternative to ferrite miniature circulators with potential advantages of small size and lower cost in production volume

Keywords

MMIC; circulators (microwave); electron device noise; field effect integrated circuits; 6 to 18 GHz; FET circulators; IC chip; MESFET; MMIC compatible; SHF; X-band; four-port type; microwave integrated circuit; microwave transistors; narrowband applications; noise performance; passive nonreciprocal components; power-handling capability; three-port type; two-port type; wideband applications; Capacitors; Circulators; Distributed parameter circuits; Inductors; Integrated circuit technology; Microwave FET integrated circuits; Microwave FETs; Microwave integrated circuits; Microwave transistors; Power transmission lines;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.42266

Filename

42266