Title :
Analytical Charge and Capacitance Models of Undoped Cylindrical Surrounding-Gate MOSFETs
Author :
Moldovan, Oana ; Iñiguez, Benjamin ; Jiménez, David ; Roig, Jaume
Author_Institution :
Departament d´´Enginyeria Electronica, Electrica i Automatica, Univ. Rovira i Virgili, Tarragona
Abstract :
We present an analytical and continuous charge model for cylindrical undoped surrounding-gate MOSFETs, from which analytical expressions of all total capacitances are obtained. The model is based on a unified charge control model derived from Poisson equation. The drain current, charge, and capacitances are written as continuous explicit functions of the applied voltages. The calculated capacitance characteristics show excellent agreement with three-dimensional numerical device simulations
Keywords :
MOSFET; Poisson equation; semiconductor device models; Poisson equation; analytical charge models; compact device modelling; continuous explicit functions; intrinsic capacitances; undoped cylindrical surrounding-gate MOSFET; unified charge control model; CMOS technology; Capacitance; Circuit simulation; Electrostatics; Integrated circuit modeling; MOSFETs; Numerical simulation; Poisson equations; Semiconductor device modeling; Silicon; Compact device modelling; intrinsic capacitances; surrounding-gate (SGT) MOSFET;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.887213
