Title :
Single-Grain Si TFTs and Circuits Inside Location-Controlled Grains Fabricated Using a Capping Layer of SiO2
Author :
Rana, Vikas ; Ishihara, Ryoichi ; Hiroshima, Yasushi ; Inoue, Satoshi ; Shimoda, Tatsuya ; Metselaar, Wim ; Beenakker, Kees
Author_Institution :
Delft Inst. of Microelectron. & Submicrontechnol., Delft Univ. of Technol.
Abstract :
To enlarge the size of two-dimensional location-controlled Si grains fabricated in the mu-Czochralski process in excimer-laser crystallization, a capping layer (C/L) of SiO2 was applied to the amorphous-Si (a-Si) thin film. With a 50-nm-thick SiO2 C/L on a 100-nm-thick a-Si film, the diameter of the location-controlled grain was increased to 7.5 mum. Single-grain Si thin-film transistors (TFTs) were fabricated with the SiO2 C/L as part of the gate insulator. Field-effect mobilities of 510 and 210 cm2/Vmiddots were obtained for electrons and holes, respectively. Both TFTs were integrated in a single-grain CMOS inverter inside a location-controlled grain. The propagation gate delay was found to be shorter than that in poly-Si circuits under the same device conditions
Keywords :
amorphous semiconductors; crystal growth from melt; crystallisation; electron mobility; excimer lasers; grain boundaries; semiconductor thin films; silicon; silicon compounds; thin film transistors; 100 nm; 50 nm; 7.5 micron; Si-SiO2; amorphous silicon thin film; capping layer; electron mobility; excimer laser crystallization; field effect mobilities; gate insulator; holes mobility; location-controlled grains; mu-Czochralski process; propagation gate delay; single-grain CMOS inverter; thin film transistors; Charge carrier processes; Circuits; Crystallization; Electron mobility; Inverters; Optical control; Semiconductor films; Semiconductor thin films; Substrates; Thin film transistors; CMOS inverter; Capping layer (C/L) of $hbox{SiO}_{2}$; excimer laser; location control; thin-film transistor (TFT);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.887516
