Title :
Numerical Study of C–V Characteristics of Double-Gate Ultrathin SOI MOSFETs
Author :
Watanabe, Hiroshi ; Uchida, Ken ; Kinoshita, Atsuhiro
Author_Institution :
Toshiba Corp., Yokohama
Abstract :
Capacitance-voltage (C-V) characteristics of double-gate ultrathin silicon-on-insulator (SOI) MOSFETs are numerically investigated in detail. The measured back-gate bias dependence is reproduced by the Poisson-Schrodinger solver including the highly precise physical models for many-body interactions of carrier-carrier and carrier-ion, and for incomplete ionization of doping impurities in whole semiconductor regions of n+poly-Si/oxide/SOI/oxide/p-Si capacitor including the volume inversion. In addition, we study the higher subband effect at higher temperature in detail, in order to deduce the impacts of self-heating and nonstatic transport
Keywords :
MOSFET; Poisson equation; Schrodinger equation; elemental semiconductors; impurities; semiconductor device models; semiconductor doping; silicon; silicon-on-insulator; C-V characteristics; Poisson-Schrodinger solver; SOI MOSFET; Si; back-gate bias dependence; capacitance-voltage characteristics; double-gate ultrathin MOSFET; n+poly-Si/oxide/SOI/oxide/p-Si capacitor; silicon-on-insulator MOSFET; volume inversion; Capacitance-voltage characteristics; Capacitors; Ionization; MOSFETs; Semiconductor device doping; Semiconductor impurities; Semiconductor process modeling; Silicon on insulator technology; Temperature; Volume measurement; Confinement; MOS devices; double-gate; silicon-on-insulator (SOI);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.887053
