DocumentCode
896957
Title
Extending the bandwidth performance of heterojunction bipolar transistor-based distributed amplifiers
Author
Kobayashi, Kevin W. ; Tran, Liem T. ; Cowles, John C. ; Block, Thomas Ray ; Oki, Aaron K. ; Streit, Dwight C.
Author_Institution
TRW Electron. Syst. & Technol. Div., Redondo Beach, CA, USA
Volume
44
Issue
5
fYear
1996
fDate
5/1/1996 12:00:00 AM
Firstpage
739
Lastpage
748
Abstract
An InAlAs-InGaAs-InP HBT CPW distributed amplifier (DA) with a 2-30 GHz 1-dB bandwidth has been demonstrated which benchmarks the widest bandwidth reported for an HBT DA. The DA combines a 100 GHz fmax and 60 GHz fT HBT technology with a cascode coplanar waveguide DA topology to achieve this record bandwidth. The cascode gain cell offers 5-7 dB more available gain (MAG) than a common-emitter, and is used to extend the amplifier´s upper frequency performance. A coplanar waveguide design environment is used to simplify the modeling and fabrication, as well as to reduce the size of the amplifier. Novel active load terminations for extending the DA´s lower frequency response were separately demonstrated. The active loads are capable of extending the lower bandwidth performance by two decades resulting in performance below 45 MHz. This work explores both design techniques and technology capability which can be applied to other distributively matched HBT circuits such as active baluns for mixers, active combiners/dividers, and low DC power-broadband amplifiers
Keywords
III-V semiconductors; MMIC amplifiers; aluminium compounds; bipolar MMIC; coplanar waveguides; distributed amplifiers; frequency response; gallium arsenide; heterojunction bipolar transistors; indium compounds; wideband amplifiers; 100 GHz; 2 to 30 GHz; 28 GHz; 60 GHz; CPW design environment; CPW distributed amplifier; HBT-based distributed amplifiers; InAlAs-InGaAs-InP; MMIC; SHF; active load terminations; bandwidth performance; broadband amplifier; cascode CPW amplifier topology; cascode gain cell; coplanar waveguide; frequency response; heterojunction bipolar transistor; Bandwidth; Circuits; Coplanar waveguides; Distributed amplifiers; Frequency response; Heterojunction bipolar transistors; Impedance matching; Optical device fabrication; Performance gain; Topology;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.493928
Filename
493928
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