DocumentCode
896982
Title
CMOS Device and Circuit Degradations Subject to HfO2 Gate Breakdown and Transient Charge-Trapping Effect
Author
Yu, Chuanzhao ; Yuan, J.S.
Author_Institution
Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL
Volume
54
Issue
1
fYear
2007
Firstpage
59
Lastpage
67
Abstract
The gate leakage current of HfO2 MOSFETs exhibits the power law characteristics after soft breakdown (BD) and the linear behavior after hard BD. Fast transient charge-trapping effect (FTCTE) shifts the inverter transfer characteristics but does not affect the high and low output voltages. The ring oscillator remains functional after gate BD. The BD position near the drain end of the n-channel transistor increases the noise figure (NF) significantly, whereas FTCTE has minor impact on the NF of the folded cascode low-noise amplifier
Keywords
CMOS integrated circuits; MOSFET; hafnium compounds; low noise amplifiers; oscillators; semiconductor device breakdown; CMOS circuit degradations; CMOS device degradations; HfO2; HfO2 MOSFET; HfO2 gate breakdown; fast transient charge-trapping effect; gate leakage current; hard breakdown; inverter transfer characteristics; low-noise amplifier; n-channel transistor; noise figure; power law characteristics; ring oscillator; soft breakdown; Breakdown voltage; Circuits; Degradation; Hafnium oxide; Inverters; Leakage current; Low voltage; MOSFETs; Noise measurement; Ring oscillators; CMOS oscillators; dielectric breakdown (BD); fast transient charge effect; leakage current; low-noise amplifier (LNA); reliability;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2006.887517
Filename
4039715
Link To Document