Title :
InGaAs-InGaAsP buried heterostructure lasers operating at 2.0 μm
Author :
Ochiai, M. ; Temkin, H. ; Forouhar, S. ; Logan, R.A.
Author_Institution :
Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA
Abstract :
Buried heterostructure lasers with highly strained InGaAs-InGaAsP active regions, emitting at 2 μm have been fabricated and tested. The lasers exhibited threshold current densities of 500 A/cm2 for 1-mm-long cavities, an internal loss of 11 cm/sup -1/, and characteristic temperatures as high as 50/spl deg/C. The gain characteristics were also investigated and a linewidth enhancement factor of 8 was determined.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; optical losses; quantum well lasers; 1 mm; 2 mum; 50 C; InGaAs-InGaAsP; InGaAs-InGaAsP laser; buried heterostructure lasers; characteristic temperatures; gain characteristics; highly strained active regions; internal loss; linewidth enhancement factor; threshold current densities; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Laser feedback; Laser modes; Quantum well lasers; Temperature; Threshold current; Waveguide lasers; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
