A novel multiple threshold MOSFET structure for A/D and D/A conversion

A novel structure based on the single device well MOSFET which has potential application in integrated circuits for data conversion and multilevel logic systems is described. The device makes use of the back-gate bias effect to achieve an array of transistors, each with a unique threshold voltage determined by its mask layout position and the bias conditions on a control element. The design, fabrication, and possible application of a test structure to digital-to-analog and analog-to-digital signal conversion circuits are investigated.