Design criteria for highly-efficient operation of 1.3-μm InP-based strained-layer multiple-quantum-well lasers at elevated temperatures

Author

Seki, S. ; Oohashi, H. ; Sugiura, H. ; Hirono, T. ; Yokoyama, K.

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

Volume

7

Issue

8

fYear

1995

Firstpage

839

Lastpage

841

Abstract

We derive a basic design rule for highly-efficient operation of 1.3-μm InP-based strained-layer (SL) multiple-quantum-well (MQW) lasers at elevated temperatures on the basis of a self-consistent numerical approach including the Poisson equation and effective-mass equations. Following the derived design rule, high-efficiency (0.55 W/A at 363 K) and high-power (over 35 mW at 363 K) InP-based SL-MQW lasers have been fabricated.

Keywords

III-V semiconductors; indium compounds; laser beams; optical design techniques; optical fabrication; quantum well lasers; 1.3 mum; 35 mW; 363 K; InP; InP-based laser; Poisson equation; design rule; effective-mass equations; elevated temperatures; high-efficiency lasers; high-power lasers; highly-efficient operation; self-consistent numerical approach; strained-layer multiple-quantum-well lasers; Capacitive sensors; Electrostatics; Fiber lasers; Optical design; Poisson equations; Quantum well devices; Quantum well lasers; Temperature sensors; Threshold current; Toxicology;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.403990

Filename

403990