DocumentCode
897079
Title
The effect of gold doping upon the characteristics of MOS field-effect transistors with applied substrate voltage
Author
Richman, Paul
Volume
56
Issue
4
fYear
1968
fDate
4/1/1968 12:00:00 AM
Firstpage
774
Lastpage
775
Abstract
From an examination of the dependence of MOS transistor threshold voltage on substrate biasing conditions, experimental evidence is presented which indicates that at least part of the shift in threshold voltage which results from gold doping can be attributed to ionized gold acceptor states near the silicon surface.
Keywords
Doping; Electrodes; FETs; Gold; Insulation; MOSFET circuits; Silicon; Threshold voltage; Transconductance; Voltage control;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1968.6393
Filename
1448323
Link To Document