InGaAs-InP superlattice electroabsorption waveguide modulator

Author

Neitzert, H.C. ; Cacciatore, C. ; Campi, D. ; Rigo, C. ; Coriasso, C. ; Stano, A.

Author_Institution

Centro Studi e Lab. Telecommun. SpA, Torino, Italy

Volume

7

Issue

8

fYear

1995

Firstpage

875

Lastpage

877

Abstract

An electroabsorption waveguide modulator with an extinction ratio for TE-polarized light at 1550 nm of more than 20 dB for a voltage swing of less than 3 V, and low insertion losses has been realized, which exploits the Wannier-Stark effect in an InGaAs-InP short period superlattice, grown by chemical beam epitaxy. Even for a fixed voltage swing of 2.6 V, a good transmission contrast has been obtained in a wide wavelength range.<>

Keywords

III-V semiconductors; Stark effect; chemical beam epitaxial growth; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical fabrication; optical waveguides; semiconductor epitaxial layers; semiconductor superlattices; 1550 nm; 2.6 V; InGaAs-InP; InGaAs-InP superlattice; TE-polarized light; Wannier-Stark effect; chemical beam epitaxy; electroabsorption waveguide modulator; extinction ratio; insertion losses; short period superlattice; transmission contrast; voltage swing; Absorption; Chemicals; Doping; Indium phosphide; Molecular beam epitaxial growth; Optical modulation; Optical waveguides; Semiconductor superlattices; Semiconductor waveguides; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.404000

Filename

404000