Electrooptic and electroabsorptive modulation properties in interdiffusion-modified AlGaAs-GaAs quantum wells

Author

Li, E. Herbert ; Choy, Wallace C.H.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong

Volume

7

Issue

8

fYear

1995

Firstpage

881

Lastpage

883

Abstract

The electric field induced refractive index change and absorption coefficient change in TE polarization are analyzed at room temperature for several interdiffusion modified Al/sub 0.3/Ga/sub 0.7/As-GaAs quantum-well structures. The results show that for the small and medium interdiffusion lengths with fields of 100 and 50 kV/cm, respectively, improved chirping and electroabsorption can be obtained. Further, in a selected set of interdiffusion lengths and fields, the material can be used for an electroabsorption modulator with reduced chirping in a wide range of operation wavelengths (758-874 nm).<>

Keywords

III-V semiconductors; absorption coefficients; aluminium compounds; chemical interdiffusion; chirp modulation; electro-optical modulation; electroabsorption; gallium arsenide; refractive index; semiconductor quantum wells; 298 K; 758 to 874 nm; Al/sub 0.3/Ga/sub 0.7/As-GaAs; AlGaAs-GaAs; TE polarization; absorption coefficient change; chirping; electric field induced refractive index change; electroabsorption modulator; electroabsorptive modulation properties; electrooptic modulation properties; interdiffusion lengths; interdiffusion-modified quantum well; operation wavelengths; room temperature; Absorption; Chirp modulation; Electrooptic modulators; Excitons; III-V semiconductor materials; Monolithic integrated circuits; Phase modulation; Potential well; Refractive index; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.404002

Filename

404002