• DocumentCode
    897467
  • Title

    Field-effect transistor noise at low temperatures

  • Author

    Spaulding, R.A.

  • Volume
    56
  • Issue
    5
  • fYear
    1968
  • fDate
    5/1/1968 12:00:00 AM
  • Firstpage
    886
  • Lastpage
    887
  • Abstract
    An investigation of junction FET noise in the temperature range of 300°K to 77°K indicates that the temperature dependence of low-frequency noise spectra may be attributed to charge fluctuations at generation centers in the depletion region.
  • Keywords
    Algebra; Control systems; Energy states; FETs; Fluctuations; Hydrogen; Low-frequency noise; Noise measurement; Temperature distribution; Voltage measurement;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1968.6433
  • Filename
    1448363
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=897467