DocumentCode :
897506
Title :
A Trapping Mechanism for Autodoping in Silicon Epitaxy - II. Parameter Extraction and Simulations
Author :
Wong, Man ; Reif, Rafael ; Srinivasan, Gurumakonda R.
Volume :
20
Issue :
1
fYear :
1985
Firstpage :
9
Lastpage :
14
Abstract :
In the previous paper [1], an improved dopant incorporation model was presented. Three parameters were found to define the model. In the present paper, the experimental procedure for determining these parameters and the numerical implementation of the model are described. Evidence for identifying autodoping as an initial transient profile is presented. With properly determined parameters, the model is capable of simulating autodoping profiles obtained from the literature, covering a variety of reactor geometries, silicon sources, and deposition conditions.
Keywords :
Digital simulation; Elemental semiconductors; Semiconductor doping; Semiconductor growth; Silicon; Vapour phase epitaxial growth; Atomic layer deposition; Doping; Epitaxial growth; Epitaxial layers; Equations; Parameter extraction; Semiconductor process modeling; Silicon; Solid modeling; Steady-state;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1985.1052271
Filename :
1052271
Link To Document :
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