• DocumentCode
    897851
  • Title

    Hot-Electron-Induced MOSFET Degradation - Model, Monitor, and Improvement

  • Author

    Hu, Chenming ; Tam, Simon C. ; Hsu, Fu-Chieh ; Ko, Ping-Keung ; Chan, Tung-Yi ; Terrill, Kyle W.

  • Volume
    20
  • Issue
    1
  • fYear
    1985
  • Firstpage
    295
  • Lastpage
    305
  • Abstract
    Evidence suggests that MOSFET degradation is due to interface-states generation by electrons having 3.7 eV and higher energies. This critical energy and the observed time dependence is explained with a physical model involving the breaking of the = Si/sub s/H bonds. The device lifetime /spl tau/ is proportional to...
  • Keywords
    Hot carriers; Insulated gate field effect transistors; Semiconductor device models; Charge carrier processes; Degradation; Dielectrics; Electron emission; Electron traps; Hot carriers; Interface states; MOSFET circuits; Monitoring; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1985.1052306
  • Filename
    1052306
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=897851