Hot-Electron Substrate-Current Generation During Switching Transients

Author

Hsu, Fu-Chieh ; Chiu, Kuang Yi

Volume

20

Issue

1

fYear

1985

fDate

2/1/1985 12:00:00 AM

Firstpage

314

Lastpage

319

Abstract

The characteristics of hot-electron substrate-current generation in n-channel MOSFET´s during switching transients of an inverter are studied. The amount of substrate current generated depends strongly on the loading and the input transition time (switching speed) of the inverter. Most circuit elements including inverters, source followers, and transfer gates have similar behaviors in transient substrate-current generation. An analytical model is proposed to calculate the substrate-current generation with various supply voltages and input transition times. This model not only establishes the relationship between dc and transient substrate-current measurements, but also serves as a useful tool in predicting circuit/device reliability during actual circuit operations.

Keywords

Field effect integrated circuits; Hot carriers; Insulated gate field effect transistors; Invertors; Large scale integration; Reliability; Semiconductor device models; Transients; Analytical models; Character generation; DC generators; Degradation; Electric breakdown; Inverters; MOSFET circuits; Predictive models; Random access memory; Threshold voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.1985.1052308

Filename

1052308