• DocumentCode
    897984
  • Title

    Improvement in radiation hardness of reoxidized nitrided oxide (RNO) in the absence of post-oxidation anneal

  • Author

    Wu, You-Lin ; Hwu, Jenn-Gwo

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    14
  • Issue
    1
  • fYear
    1993
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A simple radiation-hard process for rapid thermal reoxidized nitrided oxide (RNO) structures is proposed. This process involves fast pulling (FP) of samples out of the furnace in a mixture of oxygen and nitrogen immediately after the oxidation has been completed. Samples with starting oxides prepared by conventional postoxidation annealing (POA) are also compared. It is found from CV curves that the initial interface property of an RNO structure with a fast pulled starting oxide (RNO/sub FP/) is almost the same as that with a postoxidation annealed starting oxide (RNO/sub POA/); however, after being exposed to Co-60 irradiation, the former becomes superior to the latter. Excess oxygen left at interface in the starting oxide during the fast pulling procedure might be the origin of the radiation-hard property for RNO/sub FP/ structures.<>
  • Keywords
    gamma-ray effects; nitridation; oxidation; radiation hardening (electronics); rapid thermal processing; /sup 60/Co radiation; CV curves; Co-60 irradiation; RNO; fast pulled starting oxide; fast pulling; gamma radiation; initial interface property; oxidation; postoxidation annealing; radiation hardness; radiation-hard process; rapid thermal reoxidized nitrided oxide; reoxidized nitrided oxide; Aluminum; Degradation; Furnaces; MOS capacitors; Nitrogen; Oxidation; Rapid thermal annealing; Rapid thermal processing; Semiconductor devices; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.215081
  • Filename
    215081